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Nanoelectronic Materials and Devices : Select Proceedings of ICNE TS2, Volume III / edited by Christophe Labbé, Subhananda Chakrabart i, Gargi Raina, B. Bindu.

Contributor(s): Material type: TextTextSeries: Lecture Notes in Electrical Engineering ; 466 | Lecture Notes in Electrical Engineering ; 466Singapore : Springer Singapore : Imprint: Springer, 2018Edition: 1st ed. 2018Description: 1 online resource (XII, 246 pages 197 illustrations, 73 illustration s in color.)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9789811071911
Subject(s): Additional physical formats: Nanoelectronic materials and devices.; No title; No title; No titleDDC classification:
  • 620.5 23
Contents:
Summary: This book gathers a collection of papers by international experts th at were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including r elevant nano/micro materials and devices. Highlighting the latest resea rch on nanoelectronic materials and devices, the book offers a valuable guide for researchers, practitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energ y application, sensing and high strength materials and simulation of no vel device design structures for ultra-low power applications..
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The Effect of Functionalized MWCNT on Mechanical and Electrical Prop erties of PMMA Nanocomposites -- Performance Analysis of Dual-Metal Dou ble-Gate Tunnel-Fets for Ultralow Power Applications -- Films of Reduce d Graphene Oxide based Metal Oxide Nanoparticles -- Size optimization o f InAs/GaAs quantum dots for longer storage memory applications -- Desi gn and Analysis of a CMOS 180 nm Fractional N Frequency Synthesizer -- Memristor based Approximate Adders for Error Resilient Applications -- Integrated Mems Capacitive Pressure Sensor with On-Chip CDC for a wide Operating Temperature Range -- A High SNDR and Wider Signal Bandwidth C T [summation][increment] Modulator with a Single Loop Non-linear Feedba ck Compensation -- Design of Current Mode CNTFET Transceiver for Bundle d Carbon Nanotube Interconnect -- Weak Cell Detection Techniques for Me mristor Based Memories -- Enhancement of Transconductance using Multi-r ecycle Folded Cascode Amplifier -- Nondestructive Read Circuit for Memr istor based Memories -- A Built in Self Repair Architecture for Random Access Memories -- A Current Mode DC-DC Boost Converter with Fast Trans ient and on-chip Current Sensing Technique -- A Modified GDI Based Low Power and High Read Stability 8T SRAM Memory with CNTFET Technology -- High Performance Trench Gate Power MOSFET of Indium Phosphide -- Memris tor Equipped Error Detection Technique -- 28nm FD-SOI SRAM Design using Read Stable Bit Cell Architecture -- Design and Verification of Memory Controller with Host WISHBONE Interface -- 8-Bit Asynchronous Wave-Pip elined Arithmetic-Logic Unit.

This book gathers a collection of papers by international experts th at were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including r elevant nano/micro materials and devices. Highlighting the latest resea rch on nanoelectronic materials and devices, the book offers a valuable guide for researchers, practitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energ y application, sensing and high strength materials and simulation of no vel device design structures for ultra-low power applications..

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