UNIVERSITY LIBRARY CATALOGUE

Nanoelectronic Materials and Devices : (Record no. 11284)

MARC details
000 -LEADER
fixed length control field 04663cam a22006015i 4500
001 - CONTROL NUMBER
control field vtls000357336
003 - CONTROL NUMBER IDENTIFIER
control field UG-KaMUL
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250608164218.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 240905s2018 si |||| o |||| 0|eng
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER
LC control number 2019-769519
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9789811071911
024 #7 - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-981-10-7191-1
Source of number or code doi
035 ## - SYSTEM CONTROL NUMBER
System control number 21938526
039 ## - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE]
-- 202409051337
-- 958
040 ## - CATALOGING SOURCE
Original cataloging agency DLC
Language of cataloging eng
Description conventions pn
-- rda
Transcribing agency DLC
072 ## - SUBJECT CATEGORY CODE
Subject category code TDP
Source thema
072 ## - SUBJECT CATEGORY CODE
Subject category code TDPB
Source bicssc
072 ## - SUBJECT CATEGORY CODE
Subject category code TEC027000
Source bisacsh
082 #0 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 620.5
Edition information 23
092 ## - LOCALLY ASSIGNED DEWEY CALL NUMBER (OCLC)
Classification number 620.5 NAN
097 #0 -
-- T174.7
245 #0 - TITLE STATEMENT
Title Nanoelectronic Materials and Devices :
Remainder of title Select Proceedings of ICNE TS2, Volume III /
Statement of responsibility, etc. edited by Christophe Labbé, Subhananda Chakrabart i, Gargi Raina, B. Bindu.
250 ## - EDITION STATEMENT
Edition statement 1st ed. 2018.
264 ## - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Singapore :
Name of producer, publisher, distributor, manufacturer Springer Singapore :
-- Imprint: Springer,
Date of production, publication, distribution, manufacture, or copyright notice 2018.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (XII, 246 pages 197 illustrations, 73 illustration s in color.)
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
490 #1 - SERIES STATEMENT
Series statement Lecture Notes in Electrical Engineering,
International Standard Serial Number 1876-1100 ;
Volume/sequential designation 466
505 #0 - FORMATTED CONTENTS NOTE
Formatted contents note The Effect of Functionalized MWCNT on Mechanical and Electrical Prop erties of PMMA Nanocomposites -- Performance Analysis of Dual-Metal Dou ble-Gate Tunnel-Fets for Ultralow Power Applications -- Films of Reduce d Graphene Oxide based Metal Oxide Nanoparticles -- Size optimization o f InAs/GaAs quantum dots for longer storage memory applications -- Desi gn and Analysis of a CMOS 180 nm Fractional N Frequency Synthesizer -- Memristor based Approximate Adders for Error Resilient Applications -- Integrated Mems Capacitive Pressure Sensor with On-Chip CDC for a wide Operating Temperature Range -- A High SNDR and Wider Signal Bandwidth C T [summation][increment] Modulator with a Single Loop Non-linear Feedba ck Compensation -- Design of Current Mode CNTFET Transceiver for Bundle d Carbon Nanotube Interconnect -- Weak Cell Detection Techniques for Me mristor Based Memories -- Enhancement of Transconductance using Multi-r ecycle Folded Cascode Amplifier -- Nondestructive Read Circuit for Memr istor based Memories -- A Built in Self Repair Architecture for Random Access Memories -- A Current Mode DC-DC Boost Converter with Fast Trans ient and on-chip Current Sensing Technique -- A Modified GDI Based Low Power and High Read Stability 8T SRAM Memory with CNTFET Technology -- High Performance Trench Gate Power MOSFET of Indium Phosphide -- Memris tor Equipped Error Detection Technique -- 28nm FD-SOI SRAM Design using Read Stable Bit Cell Architecture -- Design and Verification of Memory Controller with Host WISHBONE Interface -- 8-Bit Asynchronous Wave-Pip elined Arithmetic-Logic Unit.
520 ## - SUMMARY, ETC.
Summary, etc. This book gathers a collection of papers by international experts th at were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including r elevant nano/micro materials and devices. Highlighting the latest resea rch on nanoelectronic materials and devices, the book offers a valuable guide for researchers, practitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energ y application, sensing and high strength materials and simulation of no vel device design structures for ultra-low power applications..
588 ## - SOURCE OF DESCRIPTION NOTE
Source of description note Description based on publisher-supplied MARC data.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanoscale science.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanoscience.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanostructures.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanotechnology.
650 #1 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanotechnology and Microengineering.
Authority record control number or standard number https://scigraph.springernat ure.com/ontologies/product-market-codes/T18000
650 #2 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanoscale Science and Technology.
Authority record control number or standard number https://scigraph.springernature .com/ontologies/product-market-codes/P25140
650 #2 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Nanotechnology.
Authority record control number or standard number https://scigraph.springernature.com/ontologies/pr oduct-market-codes/Z14000
700 #1 - ADDED ENTRY--PERSONAL NAME
Personal name Bindu, B,
Relator term editor.
700 #1 - ADDED ENTRY--PERSONAL NAME
Personal name Chakrabarti, Subhananda,
Relator term editor.
700 #1 - ADDED ENTRY--PERSONAL NAME
Personal name Labbé, Christophe,
Relator term editor.
700 #1 - ADDED ENTRY--PERSONAL NAME
Personal name Raina, Gargi,
Relator term editor.
776 #0 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
Title Nanoelectronic materials and devices.
International Standard Book Number 978981107 1904
Record control number (DLC) 2017957702
776 #0 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9789811071904
776 #0 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9789811071928
776 #0 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9789811356025
830 ## - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Lecture Notes in Electrical Engineering,
International Standard Serial Number 1876-1100 ;
Volume/sequential designation 466
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Books - Open Access

No items available.