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010 _a2019-769519
020 _a9789811071911
024 7 _a10.1007/978-981-10-7191-1
_2doi
035 _a21938526
039 _y202409051337
_z958
040 _aDLC
_beng
_epn
_erda
_cDLC
072 _aTDP
_2thema
072 _aTDPB
_2bicssc
072 _aTEC027000
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082 0 _a620.5
_223
092 _a620.5 NAN
097 0 _aT174.7
245 0 _aNanoelectronic Materials and Devices :
_bSelect Proceedings of ICNE TS2, Volume III /
_cedited by Christophe Labbé, Subhananda Chakrabart i, Gargi Raina, B. Bindu.
250 _a1st ed. 2018.
264 _aSingapore :
_bSpringer Singapore :
_bImprint: Springer,
_c2018.
300 _a1 online resource (XII, 246 pages 197 illustrations, 73 illustration s in color.)
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aLecture Notes in Electrical Engineering,
_x1876-1100 ;
_v466
505 0 _aThe Effect of Functionalized MWCNT on Mechanical and Electrical Prop erties of PMMA Nanocomposites -- Performance Analysis of Dual-Metal Dou ble-Gate Tunnel-Fets for Ultralow Power Applications -- Films of Reduce d Graphene Oxide based Metal Oxide Nanoparticles -- Size optimization o f InAs/GaAs quantum dots for longer storage memory applications -- Desi gn and Analysis of a CMOS 180 nm Fractional N Frequency Synthesizer -- Memristor based Approximate Adders for Error Resilient Applications -- Integrated Mems Capacitive Pressure Sensor with On-Chip CDC for a wide Operating Temperature Range -- A High SNDR and Wider Signal Bandwidth C T [summation][increment] Modulator with a Single Loop Non-linear Feedba ck Compensation -- Design of Current Mode CNTFET Transceiver for Bundle d Carbon Nanotube Interconnect -- Weak Cell Detection Techniques for Me mristor Based Memories -- Enhancement of Transconductance using Multi-r ecycle Folded Cascode Amplifier -- Nondestructive Read Circuit for Memr istor based Memories -- A Built in Self Repair Architecture for Random Access Memories -- A Current Mode DC-DC Boost Converter with Fast Trans ient and on-chip Current Sensing Technique -- A Modified GDI Based Low Power and High Read Stability 8T SRAM Memory with CNTFET Technology -- High Performance Trench Gate Power MOSFET of Indium Phosphide -- Memris tor Equipped Error Detection Technique -- 28nm FD-SOI SRAM Design using Read Stable Bit Cell Architecture -- Design and Verification of Memory Controller with Host WISHBONE Interface -- 8-Bit Asynchronous Wave-Pip elined Arithmetic-Logic Unit.
520 _aThis book gathers a collection of papers by international experts th at were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including r elevant nano/micro materials and devices. Highlighting the latest resea rch on nanoelectronic materials and devices, the book offers a valuable guide for researchers, practitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energ y application, sensing and high strength materials and simulation of no vel device design structures for ultra-low power applications..
588 _aDescription based on publisher-supplied MARC data.
650 _aNanoscale science.
650 _aNanoscience.
650 _aNanostructures.
650 _aNanotechnology.
650 1 _aNanotechnology and Microengineering.
_0https://scigraph.springernat ure.com/ontologies/product-market-codes/T18000
650 2 _aNanoscale Science and Technology.
_0https://scigraph.springernature .com/ontologies/product-market-codes/P25140
650 2 _aNanotechnology.
_0https://scigraph.springernature.com/ontologies/pr oduct-market-codes/Z14000
700 1 _aBindu, B,
_eeditor.
700 1 _aChakrabarti, Subhananda,
_eeditor.
700 1 _aLabbé, Christophe,
_eeditor.
700 1 _aRaina, Gargi,
_eeditor.
776 0 _iPrint version:
_tNanoelectronic materials and devices.
_z978981107 1904
_w(DLC) 2017957702
776 0 _iPrinted edition:
_z9789811071904
776 0 _iPrinted edition:
_z9789811071928
776 0 _iPrinted edition:
_z9789811356025
830 _aLecture Notes in Electrical Engineering,
_x1876-1100 ;
_v466
942 _2ddc
_cBK
999 _c11284
_d11284